Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate ( J L - C M - D M D G ) MOSFET. The first time under the full depletion mode, the center channel potential and threshold voltage ( V T H ) have been derived. The center channel potential has been produced by solving the 2D Passion’s equation with ideal boundary conditions. The behavior of threshold voltage ( V T H ) and subthreshold drain current of the J L - C M - D M D G MOSFET by varying physical device parameters such as doping concentration ( N D n ), channel thickness ( t S i ), and channel length ratio ( L 1 : L 2 ) has been examined. The drain-induced barrier-lowering ( D I B L ) as an indicator of short-channel effects has been studied. The model results have been verified with simulation data extracted from a 2D ATLAS TCAD simulator.