Performance Analysis of Ferroelectric GAA MOSFET with Metal Grain Work Function Variability

This work represents a unique GAA MOSFET with metal work-function variations (WFVs) and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain size varied from 7nm to 10 nm is studied extensively. The potential distribution is studied by pushing the size of the device into lower technology node. The proposed structure exhibits improved drain current with lower threshold voltage. Additionally, comparative analysis on drain current of proposed structure with dual material GAA MOSFET and junction less GAA MOSFET is carried out. Irrespective of the type of the device and material used, the proposed device exhibits lower subthreshold swing (