Preliminary results on the characterization of ZnS and ZnS:La nanophosphors synthetized by chemical route
ZnS, a semiconductor material with a bandgap in the range of 3.6–3.8 eV, can be employed as a scintillator. We herein report on the preliminary results obtained from the thermoluminescence (TL) emission of ZnS and ZnS:La nanophosphors synthesized by chemical route. The samples were characterized by...
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Veröffentlicht in: | Bulletin of materials science 2023-04, Vol.46 (2), p.91, Article 91 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ZnS, a semiconductor material with a bandgap in the range of 3.6–3.8 eV, can be employed as a scintillator. We herein report on the preliminary results obtained from the thermoluminescence (TL) emission of ZnS and ZnS:La nanophosphors synthesized by chemical route. The samples were characterized by X-ray diffraction, scanning electron microscopy and TL. ZnS samples show a TL maximum centred at 87°C, while the ZnS:La sample shows two groups of components appearing between 70–160°C and 190–330°C. The dose–response displays a good linearity in the range of 10–17 Gy. |
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ISSN: | 0973-7669 0250-4707 0973-7669 |
DOI: | 10.1007/s12034-023-02920-8 |