Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell
Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero junction fabrication to trap the solar energy since then. A lot of investigation and experiments was reported on SIS (semiconductor-Insulator-Semiconduc...
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| Veröffentlicht in: | SILICON 2022-11, Vol.14 (17), p.11963-11977 |
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| creator | Dasgupta, Kaustuv Bose, Sukanta Mondal, Anup Jana, Sukhendu Gangopadhyay, Utpal |
| description | Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero junction fabrication to trap the solar energy since then. A lot of investigation and experiments was reported on SIS (semiconductor-Insulator-Semiconductor) solar cell based on Schottkey barrier technology. In this article a new theoretical analysis of SIS solar cell has been proposed. The simulation results were obtained from the theoretical analysis using MATLAB software. Further the results were validated by fabrication and experimentation of ITO-Al
2
O
3
-Si(p-type) SIS solar cell. A thin Aluminium oxide layer of 2 nm was deposited on textured n-type crystalline silicon wafer as tunnelling material. Another 0.15 μm Indium Tin Oxide (ITO) layer was sputtered on the surface to form SIS junction. Further the front and back surface were subjected to laser and screen printer to form the metal contact. The chemical and electrical properties of the solar cell were measured. An FTIR study of the deposited thin film showed the uniformity of the SIS layers. Further life time of minority carriers, quantum efficiency and I-V characteristics were obtained. An efficiency of 7.57% was achieved with open circuit voltage 0.3 V and short circuit current density 0.035 Amp/cm
2
. The results were compared with the simulation results obtained from mathematical modelling of SIS solar cell. The results were analyzed with respect to the MATLAB simulation result. |
| doi_str_mv | 10.1007/s12633-022-01910-5 |
| format | Article |
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2
O
3
-Si(p-type) SIS solar cell. A thin Aluminium oxide layer of 2 nm was deposited on textured n-type crystalline silicon wafer as tunnelling material. Another 0.15 μm Indium Tin Oxide (ITO) layer was sputtered on the surface to form SIS junction. Further the front and back surface were subjected to laser and screen printer to form the metal contact. The chemical and electrical properties of the solar cell were measured. An FTIR study of the deposited thin film showed the uniformity of the SIS layers. Further life time of minority carriers, quantum efficiency and I-V characteristics were obtained. An efficiency of 7.57% was achieved with open circuit voltage 0.3 V and short circuit current density 0.035 Amp/cm
2
. The results were compared with the simulation results obtained from mathematical modelling of SIS solar cell. The results were analyzed with respect to the MATLAB simulation result.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-022-01910-5</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Aluminum oxide ; Chemistry ; Chemistry and Materials Science ; Current voltage characteristics ; Electric contacts ; Electrical properties ; Environmental Chemistry ; Heterojunction devices ; Indium tin oxides ; Inorganic Chemistry ; Lasers ; Materials Science ; Mathematical analysis ; Mathematical models ; Matlab ; Minority carriers ; Open circuit voltage ; Optical Devices ; Optics ; Original Paper ; Photonics ; Photovoltaic cells ; Polymer Sciences ; Quantum efficiency ; Short circuit currents ; Silicon ; Silicon wafers ; Simulation ; Solar cells ; Solar energy ; Thin films</subject><ispartof>SILICON, 2022-11, Vol.14 (17), p.11963-11977</ispartof><rights>The Author(s), under exclusive licence to Springer Nature B.V. 2022</rights><rights>The Author(s), under exclusive licence to Springer Nature B.V. 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-f891d7e42b32ceaef636a96c0eb3a4bf387cd0b414739d2c961bc57f55d9235b3</citedby><cites>FETCH-LOGICAL-c249t-f891d7e42b32ceaef636a96c0eb3a4bf387cd0b414739d2c961bc57f55d9235b3</cites><orcidid>0000-0003-1819-4627</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-022-01910-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2919719813?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,21367,27901,27902,33721,41464,42533,43781,51294</link.rule.ids></links><search><creatorcontrib>Dasgupta, Kaustuv</creatorcontrib><creatorcontrib>Bose, Sukanta</creatorcontrib><creatorcontrib>Mondal, Anup</creatorcontrib><creatorcontrib>Jana, Sukhendu</creatorcontrib><creatorcontrib>Gangopadhyay, Utpal</creatorcontrib><title>Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell</title><title>SILICON</title><addtitle>Silicon</addtitle><description>Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero junction fabrication to trap the solar energy since then. A lot of investigation and experiments was reported on SIS (semiconductor-Insulator-Semiconductor) solar cell based on Schottkey barrier technology. In this article a new theoretical analysis of SIS solar cell has been proposed. The simulation results were obtained from the theoretical analysis using MATLAB software. Further the results were validated by fabrication and experimentation of ITO-Al
2
O
3
-Si(p-type) SIS solar cell. A thin Aluminium oxide layer of 2 nm was deposited on textured n-type crystalline silicon wafer as tunnelling material. Another 0.15 μm Indium Tin Oxide (ITO) layer was sputtered on the surface to form SIS junction. Further the front and back surface were subjected to laser and screen printer to form the metal contact. The chemical and electrical properties of the solar cell were measured. An FTIR study of the deposited thin film showed the uniformity of the SIS layers. Further life time of minority carriers, quantum efficiency and I-V characteristics were obtained. An efficiency of 7.57% was achieved with open circuit voltage 0.3 V and short circuit current density 0.035 Amp/cm
2
. The results were compared with the simulation results obtained from mathematical modelling of SIS solar cell. The results were analyzed with respect to the MATLAB simulation result.</description><subject>Aluminum oxide</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Current voltage characteristics</subject><subject>Electric contacts</subject><subject>Electrical properties</subject><subject>Environmental Chemistry</subject><subject>Heterojunction devices</subject><subject>Indium tin oxides</subject><subject>Inorganic Chemistry</subject><subject>Lasers</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Matlab</subject><subject>Minority carriers</subject><subject>Open circuit voltage</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Original Paper</subject><subject>Photonics</subject><subject>Photovoltaic cells</subject><subject>Polymer Sciences</subject><subject>Quantum efficiency</subject><subject>Short circuit currents</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Simulation</subject><subject>Solar cells</subject><subject>Solar energy</subject><subject>Thin films</subject><issn>1876-990X</issn><issn>1876-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE1LAzEQhoMoWLR_wFPAczQfu8nmWIqthZYetoK3kGSTumW7qcn24L83uqI35zIz8Lwz8ABwR_ADwVg8JkI5YwhTijCRBKPyAkxIJTiSklSXvzN-vQbTlA44F6Oi4nIClgttYmv10IYe6r6BGz28uWPere7gJjSu69p-D4OHGq52WzTr6JahuoX1qoZ16HSE88zcgiuvu-SmP_0GvCyedvNntN4uV_PZGllayAH5SpJGuIIaRq3TznPGteQWO8N0YTyrhG2wKUghmGyolZwYWwpflo2krDTsBtyPd08xvJ9dGtQhnGOfXyoqiRREVoRlio6UjSGl6Lw6xfao44ciWH05U6MzlZ2pb2eqzCE2hlKG-72Lf6f_SX0CSCFsQQ</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>Dasgupta, Kaustuv</creator><creator>Bose, Sukanta</creator><creator>Mondal, Anup</creator><creator>Jana, Sukhendu</creator><creator>Gangopadhyay, Utpal</creator><general>Springer Netherlands</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><orcidid>https://orcid.org/0000-0003-1819-4627</orcidid></search><sort><creationdate>20221101</creationdate><title>Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell</title><author>Dasgupta, Kaustuv ; Bose, Sukanta ; Mondal, Anup ; Jana, Sukhendu ; Gangopadhyay, Utpal</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-f891d7e42b32ceaef636a96c0eb3a4bf387cd0b414739d2c961bc57f55d9235b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Current voltage characteristics</topic><topic>Electric contacts</topic><topic>Electrical properties</topic><topic>Environmental Chemistry</topic><topic>Heterojunction devices</topic><topic>Indium tin oxides</topic><topic>Inorganic Chemistry</topic><topic>Lasers</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Matlab</topic><topic>Minority carriers</topic><topic>Open circuit voltage</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Original Paper</topic><topic>Photonics</topic><topic>Photovoltaic cells</topic><topic>Polymer Sciences</topic><topic>Quantum efficiency</topic><topic>Short circuit currents</topic><topic>Silicon</topic><topic>Silicon wafers</topic><topic>Simulation</topic><topic>Solar cells</topic><topic>Solar energy</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dasgupta, Kaustuv</creatorcontrib><creatorcontrib>Bose, Sukanta</creatorcontrib><creatorcontrib>Mondal, Anup</creatorcontrib><creatorcontrib>Jana, Sukhendu</creatorcontrib><creatorcontrib>Gangopadhyay, Utpal</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>SILICON</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dasgupta, Kaustuv</au><au>Bose, Sukanta</au><au>Mondal, Anup</au><au>Jana, Sukhendu</au><au>Gangopadhyay, Utpal</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell</atitle><jtitle>SILICON</jtitle><stitle>Silicon</stitle><date>2022-11-01</date><risdate>2022</risdate><volume>14</volume><issue>17</issue><spage>11963</spage><epage>11977</epage><pages>11963-11977</pages><issn>1876-990X</issn><eissn>1876-9918</eissn><abstract>Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero junction fabrication to trap the solar energy since then. A lot of investigation and experiments was reported on SIS (semiconductor-Insulator-Semiconductor) solar cell based on Schottkey barrier technology. In this article a new theoretical analysis of SIS solar cell has been proposed. The simulation results were obtained from the theoretical analysis using MATLAB software. Further the results were validated by fabrication and experimentation of ITO-Al
2
O
3
-Si(p-type) SIS solar cell. A thin Aluminium oxide layer of 2 nm was deposited on textured n-type crystalline silicon wafer as tunnelling material. Another 0.15 μm Indium Tin Oxide (ITO) layer was sputtered on the surface to form SIS junction. Further the front and back surface were subjected to laser and screen printer to form the metal contact. The chemical and electrical properties of the solar cell were measured. An FTIR study of the deposited thin film showed the uniformity of the SIS layers. Further life time of minority carriers, quantum efficiency and I-V characteristics were obtained. An efficiency of 7.57% was achieved with open circuit voltage 0.3 V and short circuit current density 0.035 Amp/cm
2
. The results were compared with the simulation results obtained from mathematical modelling of SIS solar cell. The results were analyzed with respect to the MATLAB simulation result.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-022-01910-5</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0003-1819-4627</orcidid></addata></record> |
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| subjects | Aluminum oxide Chemistry Chemistry and Materials Science Current voltage characteristics Electric contacts Electrical properties Environmental Chemistry Heterojunction devices Indium tin oxides Inorganic Chemistry Lasers Materials Science Mathematical analysis Mathematical models Matlab Minority carriers Open circuit voltage Optical Devices Optics Original Paper Photonics Photovoltaic cells Polymer Sciences Quantum efficiency Short circuit currents Silicon Silicon wafers Simulation Solar cells Solar energy Thin films |
| title | Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell |
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