Fabrication and Mathematical Modelling of a ITO-Al2O3-Si SIS Solar Cell

Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero junction fabrication to trap the solar energy since then. A lot of investigation and experiments was reported on SIS (semiconductor-Insulator-Semiconductor) solar cell based on Schottkey barrier technology. In this article a new theoretical analysis of SIS solar cell has been proposed. The simulation results were obtained from the theoretical analysis using MATLAB software. Further the results were validated by fabrication and experimentation of ITO-Al 2 O 3 -Si(p-type) SIS solar cell. A thin Aluminium oxide layer of 2 nm was deposited on textured n-type crystalline silicon wafer as tunnelling material. Another 0.15 μm Indium Tin Oxide (ITO) layer was sputtered on the surface to form SIS junction. Further the front and back surface were subjected to laser and screen printer to form the metal contact. The chemical and electrical properties of the solar cell were measured. An FTIR study of the deposited thin film showed the uniformity of the SIS layers. Further life time of minority carriers, quantum efficiency and I-V characteristics were obtained. An efficiency of 7.57% was achieved with open circuit voltage 0.3 V and short circuit current density 0.035 Amp/cm 2 . The results were compared with the simulation results obtained from mathematical modelling of SIS solar cell. The results were analyzed with respect to the MATLAB simulation result.