Synthesis of PMMA/PEG/Si3N4 Nanostructures and Exploring the Structural and Dielectric Characteristics for Flexible Nanoelectronics Applications

This work aims to enhance the dielectric characteristics of poly-methyl methacrylate(PMMA)/polyethylene glycol(PEG)/silicon nitride(Si 3 N 4 ) nanostructures to be functional in flexible pressure sensors and electronics nanodevices. The PMMA/PEG films and Si 3 N 4 NPs doped PMMA/PEG were fabricated by utilizing casting process. The structure characteristics of PMMA/PEG/Si 3 N 4 nanostructures were investigated and it included: FTIR and optical microscope. The dielectric characteristics were tested by using LCR meter at frequency(f) ranged from 100 Hz to 5 MHz. The structural characteristics results of PMMA/PEG/Si 3 N 4 nanostructures indicated high distribution of Si 3 N 4 NPs in the PMMA/PEG medium and excellent incorporation between Si 3 N 4 NPs and PMMA/PEG matrix. The results of dielectric characteristics demonstrated that rise in the dielectric parameters of PMMA/PEG with an increase in the Si 3 N 4 NPs content. The dielectric constant and AC electrical conductivity of PMMA/PEG increased about 39% and 49% with low values of dielectric loss ranged from 0.14 to 0.275 at 100 Hz, this result makes the PMMA/PEG/Si 3 N 4 nanostructures can be appropriate in various nanoelectronics applications. The parameters of dielectric properties for PMMA/PEG/Si 3 N 4 nanostructures were altered with an increase in the frequency. Finally, the structure and dielectric characteristics indicated to the PMMA/PEG/Si 3 N 4 nanostructures can be utilized in flexible various nanoelectronics applications with few cost, high energy storage and low loss. The pressure sensor application of PMMA/PEG/Si 3 N 4 nanostructures was investigated. The results showed the PMMA/PEG/Si 3 N 4 nanostructures have high sensitivity for pressure with excellent flexibility and high environmental resistance compared of other sensors.