Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET

In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for enhancing analog performance for high-frequency applications using ATLAS 3D device simulator. Owed to the wider bandgap, a high breakdown field, an...

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Veröffentlicht in:	SILICON 2022-10, Vol.14 (15), p.9733-9749
Hauptverfasser:	Sharma, Swati, Goel, Anubha, Rewari, Sonam, Nath, Vandana, Gupta, R. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Chemistry Chemistry and Materials Science Environmental Chemistry Field effect transistors Gallium nitrides Hafnium oxide Inorganic Chemistry Lasers Materials Science Nanowires Optical Devices Optics Original Paper Photonics Polymer Sciences Power gain Reflectance S parameters Semiconductor devices Silicon Silicon dioxide Silicon oxides Threshold voltage Transconductance Transport properties
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