Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET

In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for enhancing analog performance for high-frequency applications using ATLAS 3D device simulator. Owed to the wider bandgap, a high breakdown field, and good transport properties GaN and Aluminium Oxide (Al 2 O 3 ) is proposed to replace the conventional Silicon (Si) and Silicon Oxide (SiO 2 ) respectively in Schottky Nanowire FET. A stack of Al 2 O 3 with hafnium dioxide (HfO 2 ) has been anticipated because of high thermal constancy, high dielectric constant, and high consistency of HfO 2 with preventive interface eminence. An in-depth study is done between GaN and Si devices named Dielectric Engineered High-K GaN Schottky Nanowire FET (DE-HK-GaN-SNWFET), GaN Schottky Nanowire FET (GaN-SNWFET), High-K -Silicon Schottky Nanowire FET (HK-Si-SNWFET), and Silicon Schottky Nanowire FET (Si-SNWFET). Appraised electrical parameters show that the device passivated with a stack of Al 2 O 3 /HfO 2 with GaN as channel material shows better results in terms of drain currents, transconductance, output conductance, Gate Capacitance, Cut off Frequency, unilateral power gain, Maximum Transducer Power Gain, subthreshold swing, threshold voltage, and Frequency Transconductance Product. The scattering parameters, i.e., reflection coefficient (S 11 , S 22 ) and transmission coefficient (S 12 , S 21 ), affirm analog performance of DE-HK-GaN-SNWFET than other contemplated devices.