Electrical Properties of MOS Capacitor with TiO2/SiO2 Dielectric Layer

Electrical Properties of MOS Capacitor with TiO2/SiO2 Dielectric Layer

The TiO 2 /SiO 2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO 2 /SiO 2 /n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The optical properties of the oxide film were ana...

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Veröffentlicht in:SILICON 2020-12, Vol.12 (12), p.2879-2883
Hauptverfasser: Cetin, Saime Sebnem, Efkere, Halil Ibrahim, Sertel, Tunc, Tataroglu, Adem, Ozcelik, Suleyman
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Chemistry
Chemistry and Materials Science
Dielectric properties
Electric contacts
Electrical properties
Environmental Chemistry
Fourier transforms
Gold
Infrared analysis
Inorganic Chemistry
Lasers
Magnetron sputtering
Materials Science
Metal oxide semiconductors
Optical Devices
Optical properties
Optics
Original Paper
Oxide coatings
Photonics
Polymer Sciences
Radio frequency
Silicon dioxide
Spectrum analysis
Temperature
Thin films
Titanium dioxide
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Zusammenfassung:The TiO 2 /SiO 2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO 2 /SiO 2 /n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The optical properties of the oxide film were analyzed by Fourier transform infrared (FTIR) and Ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the MOS capacitor were investigated using admittance (Y = G + iωC) measurements performed at various frequencies. The series resistance (R s ) parameter of the capacitor was derived from the conductance method.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-020-00383-8