A numerical approach to maximizing efficiency in Sb2Se3 solar cells by using CuS as a hole transport material

The current paper uses the SCAPS-1D software to investigate the performance of the Al/n-ITO/n-CdS/p-Sb 2 Se 3 /p-CuS/Ni solar cell. After adjusting the simulated and experimental J – V features of the traditional ITO/CdS/Sb 2 Se 3 /Au solar cell with an efficiency of 7.6%, the influence of diverse factors such as thickness, doping, defect density in each layer, and capture cross section in Sb 2 Se 3 and at the CdS/Sb 2 Se 3 interface on the cell’s performance is examined. The highest PCE achieved for the standard cell is 21.05% when the absorber, CdS and ITO layer thicknesses are reduced to 600 nm, 70 nm, and 100 nm, respectively, and their carrier concentrations are fixed at 5.10 15 , 10 19 , and 10 19 cm −3 , respectively. A new hole transport layer, consisting of inorganic copper sulfide (CuS), has been incorporated, thus improving the efficiency by blocking electrons and reducing carrier recombination. The effects of front and back contact work function, temperature, and cell resistance are also discussed. The rear-contact Ni and the front-contact Al were found to be the best arrangements with CuS HTL in the ITO/CdS/Sb 2 Se 3 structure cell. Therefore, the optimization of the proposed Al/ITO/CdS/Sb 2 Se 3 /CuS/Ni solar structure reveals good thermal stability with a higher PCE of 23.16% for V OC , J SC , and FF of 0.761 V, 37.59 mA/cm 2 , and 80.97%, respectively, at 300 K.