A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

In this article, a distinctive charge plasma (CP) technique is employed to design two doping-less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si 0.5 Ge 0.5 and Si as source material. The CP methodology resolves the issues of random doping fluctuation and doping activation. The analog and RF performance has been investigated for both the proposed devices i.e. Si 0.5 Ge 0.5 source DL-DG-TFET and Si-source DL-DG-TFET in terms of drive current, transconductance, cut-off frequency. In addition, the linearity and distortion analysis has been carried out for both the proposed devices with respect to higher order transconductance (g m2 and g m3 ), VIP2, IMD3, and HD2. The Si 0.5 Ge 0.5 source DL-DG-TFET has better performance characteristics and reliability in compare to Si-source DL-DG-TFET owing to low energy bandgap material and higher mobility. The switching ratio obtained for Si 0.5 Ge 0.5 source DL-DG-TFET is order of 5 × 10 14 that makes it a suitable contender for low power applications.