Current Transport and Capacitance–Voltage Characteristics of the Novel Al/n-Si/CuGaSnS4/Au Heterojunction

This research work introduces the growth of CuGaSnS 4 /n-Si heterojunction using a spray pyrolysis procedure on a pre-washed n-type silicon substrate. The X-ray diffraction (XRD) investigations presented an orthorhombic single phase of the CuGaSnS 4 thin films. The surface morphologies of CuGaSnS 4 samples were fixed via the field emission scanning electron microscope, FE-SEM which depicted a homogeneous surface for the investigated films and the EDAX pattern of CuGaSnS 4 films confirms the presence of copper, gallium, tin and sulfur atoms with an atomic ratio near to 1:1:1:4. The dark current–voltage investigations were hired to estimate the heterojunction parameters like the diode ideality factor values ( n ), shunt resistance values ( R sh ) and the effective barrier height ( ϕ b ). The studied heterojunction revealed good rectifying behavior through the dark current–voltage curves. Also, capacitance–voltage investigations in dark conditions were used to evaluate the built-in voltages and the net carrier concentration. Many interesting photovoltaic parameters have been estimated for the studied heterojunction such as the solar efficiency ( η ), the fill factor ( FF ) and open-circuit voltage ( V OC ). Moreover, the solar efficiency ( η ) of the CuGaSnS 4 /n-Si heterojunction has been inspected using current–voltage measurements under illumination and we found that the CuGaSnS 4 /n-Si heterojunction revealed solar efficiency equal 1.52%.