High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

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Veröffentlicht in:Science China. Information sciences 2023-12, Vol.66 (12), p.229404, Article 229404
Hauptverfasser: Fan, Yutong, Liu, Xi, Huang, Ren, Wen, Yu, Zhang, Weihang, Zhang, Jincheng, Liu, Zhihong, Zhao, Shenglei
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Computer Science
Energy dissipation
Heterostructures
Information Systems and Communication Service
Letter
Silicon dioxide
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container_end_page
container_issue 12
container_start_page 229404
container_title Science China. Information sciences
container_volume 66
creator Fan, Yutong
Liu, Xi
Huang, Ren
Wen, Yu
Zhang, Weihang
Zhang, Jincheng
Liu, Zhihong
Zhao, Shenglei
description
doi_str_mv 10.1007/s11432-022-3707-2
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2918646198</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2918646198</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-18ca734c1fd6231ab20646f47cd2be958ced2f17da4237e270770684571845823</originalsourceid><addsrcrecordid>eNp1UU1r3DAQNaWBhiQ_oDdBL-1Ba43kWPalsIR0t5DsHpKW3oQsyWsljuVKcpb9V_2JlbOBnDKH-YA37zHzsuwzkAUQwvMAUDCKCaWYccIx_ZCdQlXWGGqoP6a-5AXmjP35lF2E8EBSMEYor06zf2u763DjjXzUbj_gZ9dHuTPo63eWUOj3NyQHjXq3x6PbG4-1DcGOMlo3oGVPFmwlyYJv8pXc5PMM81xvkHZT0xvcmWi8C9FPKk7eoPX17X1Aexs7tO2erMrvVOdifDyg7tB4q5H20g7hRXTZ0y3L7-yWolEm1ecX1fPspJV9MBev9Sz79eP6_mqNb7arn1fLG6wYlBFDpSRnhYJWl5SBbCgpi7ItuNK0MfVlpYymLXAtC8q4oeltnJRVcckhpYqys-zLkXf07u9kQhQPbvJDkhS0Ts8tSqirhIIjSqUrgzetGL19kv4ggIjZG3H0RiRvxOyNmJnpcSck7LAz_o35_aX_x_2OtQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2918646198</pqid></control><display><type>article</type><title>High-breakdown-voltage (&gt;3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation</title><source>SpringerLink Journals</source><source>Alma/SFX Local Collection</source><source>ProQuest Central</source><creator>Fan, Yutong ; Liu, Xi ; Huang, Ren ; Wen, Yu ; Zhang, Weihang ; Zhang, Jincheng ; Liu, Zhihong ; Zhao, Shenglei</creator><creatorcontrib>Fan, Yutong ; Liu, Xi ; Huang, Ren ; Wen, Yu ; Zhang, Weihang ; Zhang, Jincheng ; Liu, Zhihong ; Zhao, Shenglei</creatorcontrib><identifier>ISSN: 1674-733X</identifier><identifier>EISSN: 1869-1919</identifier><identifier>DOI: 10.1007/s11432-022-3707-2</identifier><language>eng</language><publisher>Beijing: Science China Press</publisher><subject>Aluminum oxide ; Computer Science ; Energy dissipation ; Heterostructures ; Information Systems and Communication Service ; Letter ; Silicon dioxide</subject><ispartof>Science China. Information sciences, 2023-12, Vol.66 (12), p.229404, Article 229404</ispartof><rights>Science China Press 2023</rights><rights>Copyright Springer Nature B.V. Dec 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-18ca734c1fd6231ab20646f47cd2be958ced2f17da4237e270770684571845823</citedby><cites>FETCH-LOGICAL-c316t-18ca734c1fd6231ab20646f47cd2be958ced2f17da4237e270770684571845823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11432-022-3707-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918646198?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,21367,27901,27902,33721,41464,42533,43781,51294</link.rule.ids></links><search><creatorcontrib>Fan, Yutong</creatorcontrib><creatorcontrib>Liu, Xi</creatorcontrib><creatorcontrib>Huang, Ren</creatorcontrib><creatorcontrib>Wen, Yu</creatorcontrib><creatorcontrib>Zhang, Weihang</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Liu, Zhihong</creatorcontrib><creatorcontrib>Zhao, Shenglei</creatorcontrib><title>High-breakdown-voltage (&gt;3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation</title><title>Science China. Information sciences</title><addtitle>Sci. China Inf. Sci</addtitle><subject>Aluminum oxide</subject><subject>Computer Science</subject><subject>Energy dissipation</subject><subject>Heterostructures</subject><subject>Information Systems and Communication Service</subject><subject>Letter</subject><subject>Silicon dioxide</subject><issn>1674-733X</issn><issn>1869-1919</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1UU1r3DAQNaWBhiQ_oDdBL-1Ba43kWPalsIR0t5DsHpKW3oQsyWsljuVKcpb9V_2JlbOBnDKH-YA37zHzsuwzkAUQwvMAUDCKCaWYccIx_ZCdQlXWGGqoP6a-5AXmjP35lF2E8EBSMEYor06zf2u763DjjXzUbj_gZ9dHuTPo63eWUOj3NyQHjXq3x6PbG4-1DcGOMlo3oGVPFmwlyYJv8pXc5PMM81xvkHZT0xvcmWi8C9FPKk7eoPX17X1Aexs7tO2erMrvVOdifDyg7tB4q5H20g7hRXTZ0y3L7-yWolEm1ecX1fPspJV9MBev9Sz79eP6_mqNb7arn1fLG6wYlBFDpSRnhYJWl5SBbCgpi7ItuNK0MfVlpYymLXAtC8q4oeltnJRVcckhpYqys-zLkXf07u9kQhQPbvJDkhS0Ts8tSqirhIIjSqUrgzetGL19kv4ggIjZG3H0RiRvxOyNmJnpcSck7LAz_o35_aX_x_2OtQ</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>Fan, Yutong</creator><creator>Liu, Xi</creator><creator>Huang, Ren</creator><creator>Wen, Yu</creator><creator>Zhang, Weihang</creator><creator>Zhang, Jincheng</creator><creator>Liu, Zhihong</creator><creator>Zhao, Shenglei</creator><general>Science China Press</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>P5Z</scope><scope>P62</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20231201</creationdate><title>High-breakdown-voltage (&gt;3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation</title><author>Fan, Yutong ; Liu, Xi ; Huang, Ren ; Wen, Yu ; Zhang, Weihang ; Zhang, Jincheng ; Liu, Zhihong ; Zhao, Shenglei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-18ca734c1fd6231ab20646f47cd2be958ced2f17da4237e270770684571845823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum oxide</topic><topic>Computer Science</topic><topic>Energy dissipation</topic><topic>Heterostructures</topic><topic>Information Systems and Communication Service</topic><topic>Letter</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fan, Yutong</creatorcontrib><creatorcontrib>Liu, Xi</creatorcontrib><creatorcontrib>Huang, Ren</creatorcontrib><creatorcontrib>Wen, Yu</creatorcontrib><creatorcontrib>Zhang, Weihang</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Liu, Zhihong</creatorcontrib><creatorcontrib>Zhao, Shenglei</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied &amp; Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Science China. Information sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fan, Yutong</au><au>Liu, Xi</au><au>Huang, Ren</au><au>Wen, Yu</au><au>Zhang, Weihang</au><au>Zhang, Jincheng</au><au>Liu, Zhihong</au><au>Zhao, Shenglei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-breakdown-voltage (&gt;3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation</atitle><jtitle>Science China. Information sciences</jtitle><stitle>Sci. China Inf. Sci</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>66</volume><issue>12</issue><spage>229404</spage><pages>229404-</pages><artnum>229404</artnum><issn>1674-733X</issn><eissn>1869-1919</eissn><cop>Beijing</cop><pub>Science China Press</pub><doi>10.1007/s11432-022-3707-2</doi></addata></record>
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source SpringerLink Journals; Alma/SFX Local Collection; ProQuest Central
subjects Aluminum oxide
Computer Science
Energy dissipation
Heterostructures
Information Systems and Communication Service
Letter
Silicon dioxide
title High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T00%3A54%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-breakdown-voltage%20(%3E3000%20V)%20and%20low-power-dissipation%20Al0.3Ga0.7N/GaN/Al0.1Ga0.9N%20double-heterostructure%20HEMTs%20with%20Ohmic/Schottky%20hybrid%20drains%20and%20Al2O3/SiO2%20passivation&rft.jtitle=Science%20China.%20Information%20sciences&rft.au=Fan,%20Yutong&rft.date=2023-12-01&rft.volume=66&rft.issue=12&rft.spage=229404&rft.pages=229404-&rft.artnum=229404&rft.issn=1674-733X&rft.eissn=1869-1919&rft_id=info:doi/10.1007/s11432-022-3707-2&rft_dat=%3Cproquest_cross%3E2918646198%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2918646198&rft_id=info:pmid/&rfr_iscdi=true