Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

Based on the integral method of single event upset（SEU） rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor（CMOS） devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figu...

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Veröffentlicht in:	Science China. Information sciences 2016-04, Vol.59 (4), p.52-62, Article 042402
Hauptverfasser:	He, Liang, Chen, Hua, Sun, Peng, Jia, Xiaofei, Dai, Chongguang, Liu, Jing, Shao, Long, Liu, Zhaoqing
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Computer Science Figure of merit Information Systems and Communication Service Research Paper Semiconductor devices Single event upsets 互补金属氧化物半导体 半导体器件 单粒子翻转率 收集装置 模型改进 深亚微米CMOS 超深亚微米 载流子收集
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