Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

Based on the integral method of single event upset（SEU） rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor（CMOS） devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit（FOM） methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.