The Effect of High Temperature He+ Implantation on Polycrystalline Tungsten in IR-IECF

High temperature (1,100–1,200°C) implantation impact of helium ions in PC Tungsten as a candidate fusion first wall material was studied in the Iranian Inertial Electrostatic Confinement device (IR-IECF). High energetic (100–120 keV) helium ions were applied to produce fluences up to 5 × 10 20 He +...

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Veröffentlicht in:Journal of fusion energy 2012-08, Vol.31 (4), p.389-395
Hauptverfasser: Semsari, S., Sadighzadeh, A., Zakeri, A., Khademzade, S., Torabi, M., Sedaghat, M., Damideh, V.
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Sprache:eng
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Zusammenfassung:High temperature (1,100–1,200°C) implantation impact of helium ions in PC Tungsten as a candidate fusion first wall material was studied in the Iranian Inertial Electrostatic Confinement device (IR-IECF). High energetic (100–120 keV) helium ions were applied to produce fluences up to 5 × 10 20 He + /cm 2 on the surface of Tungsten. Scanning electron microscopy (SEM) was used to investigate surface morphology changes for various ion fluences. The results showed formation of ‘coral-like’ surface structure and exfoliation and intensive increment in pore formation at high fluence. Microhardness measurements were used to evaluate mechanical properties of implanted tungsten. These investigations revealed that hardness increased with greater He + dose. The phase formation and structural evolution were studied by X-ray diffractometry method.
ISSN:0164-0313
1572-9591
DOI:10.1007/s10894-011-9481-5