A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

The electrical model of a magnetically sensitive two-drain contact AlGaN/GaN HEMT (MagHEMT) is described for the first time and implemented in the SPICE circuit simulator. The macro model is based on the equivalent circuit consisting of two identical and parallelly connected magnetically sensitive AlGaN/GaN HEMTs. The method for including the influence of the magnetic field in a recently proposed physics-based circuit model of GaN HEMTs is also presented. Good accuracy of the MagHEMT electrical model is demonstrated by comparing the SPICE simulations with the measured results of magnetic sensitivity characteristics of fabricated Al 0.25 Ga 0.75 N/GaN MagHEMTs with different channel lengths.