Numerical simulations of carrier-selective contact silicon solar cells: Role of carrier-selective layers electronic properties

Ag/ITO/MoO x /n-Si/LiF x /Al carrier-selective contact (CSC) solar cell structures are modelled and numerically simulated based on the experimental data using an industrial quality base silicon wafer by the Sentaurus TCAD software. The role of (1) electron-selective lithium fluoride (LiF x ) layer and its thickness, (2) hole-selective molybdenum oxide (MoO x ) work function variation, and (3) front contact (MoO x /n-Si) surface passivation interlayer are explored on the device performance. The electron-selective LiF x layer at the rear side is led to the substantial enhancement in device photocurrent by providing the electrical barrier to the minority carriers (holes) and a slight improvement in open-circuit voltage, but the thickness of the layer is sensitive to efficient extraction of the majority carriers (electrons). The hole-selective MoO x layer work function needs to be engineered for inducing the strong inversion layer with better built-in potential at the MoO x /n-Si junction to achieve high open-circuit voltage from a cell. A thin SiO x interlayer at the MoO x /n-Si junction has significantly enhanced the device’s open-circuit voltage by minimizing the minority carrier recombination at the interface.