Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESF...

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Veröffentlicht in:Journal of computational electronics 2003-12, Vol.2 (2-4), p.213-217
Hauptverfasser: Branlard, J., Aboud, S., Goodnick, S., Saraniti, M.
Format: Artikel
Sprache:eng
Schlagworte:
Current voltage characteristics
Simulation
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Zusammenfassung:The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.
ISSN:1569-8025
1572-8137
DOI:10.1023/B:JCEL.0000011427.63034.4e