Drain temperature determination in dual-gate GaAs MESFETs

This paper describes the temperature dependence of the drain current and the drain temperature in dual-gate GaAs MESFETs. The model presented, effectively couples together the effects of the operating temperature and the polarization voltages on the electron temperature and the drain current. This offers improved accuracy over existing models by considering a nonlinear field-dependent diffusivity-to-mobility ratio. Two-dimensional numerical simulation is used to describe significant physics in the characteristics for 0.5 µm gates GaAs DGMESFET.