Transient TCAD simulation of three-stage organic ring oscillator

Transient TCAD simulation of three-stage organic ring oscillator

It is demonstrated that drift-diffusion simulation is a powerful tool in design, optimization and verification of organic circuits. Starting from the simulation of single transistor structures, we treat inverter circuits with active load under both static and transient conditions while analyzing the...

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Veröffentlicht in:Journal of computational electronics 2006-12, Vol.5 (4), p.345-348
Hauptverfasser: Erlen, C., Lugli, P., Fiebig, M., Schiefer, S., Nickel, B.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit design
Design optimization
Finite element method
Oscillators
Simulation
Transistors
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Zusammenfassung:It is demonstrated that drift-diffusion simulation is a powerful tool in design, optimization and verification of organic circuits. Starting from the simulation of single transistor structures, we treat inverter circuits with active load under both static and transient conditions while analyzing the effects of different transistor geometries. Never shown before, a dynamic finite element simulation of a full three-stage organic ring oscillator operating at 105 kHz is presented.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-0006-9