C60-containing polymers for electron beam lithography

New C 60 -containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p -chloromethylstyrene and p - tert -butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the C 60 -containing polymers were obtained by...

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Veröffentlicht in:Polymer bulletin (Berlin, Germany) Germany), 2014, Vol.71 (9), p.2395-2405
Hauptverfasser: Okamura, Haruyuki, Forman, Drew C., Ober, Christopher K.
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Forman, Drew C.
Ober, Christopher K.
description New C 60 -containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p -chloromethylstyrene and p - tert -butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the C 60 -containing polymers were obtained by the reaction of C 60 with the nitroxide-terminated polymers and the subsequent transformation of the tert -butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the C 60 -containing copolymers of p -chloromethylstyrene and p -hydroxystyrene.
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subjects Applied sciences
Characterization and Evaluation of Materials
Chemistry
Chemistry and Materials Science
Complex Fluids and Microfluidics
Copolymers
Electron beam lithography
Exact sciences and technology
Molecular weight
Organic Chemistry
Organic polymers
Original Paper
Physical Chemistry
Physicochemistry of polymers
Polymer Sciences
Polymerization
Polymers
Polymers with particular properties
Preparation, kinetics, thermodynamics, mechanism and catalysts
Silicon wafers
Soft and Granular Matter
title C60-containing polymers for electron beam lithography
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