C60-containing polymers for electron beam lithography

New C 60 -containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p -chloromethylstyrene and p - tert -butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the C 60 -containing polymers were obtained by the reaction of C 60 with the nitroxide-terminated polymers and the subsequent transformation of the tert -butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the C 60 -containing copolymers of p -chloromethylstyrene and p -hydroxystyrene.