Fabrication, constructions and electrical property of Si2Sb2Te5 electrical probe storage system

A Si 2 Sb 2 Te 5 (SST) memory array with density of 4 Gbit/in. 2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 μm 2 . Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by...

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Veröffentlicht in:	Microsystem technologies : sensors, actuators, systems integration actuators, systems integration, 2009-09, Vol.15 (9), p.1389-1393
Hauptverfasser:	Liu, Yanbo, Song, Zhitang, Zhang, Ting, Zhang, Guoxin, Zhang, Jing, Zhou, Weimin, Zhang, Jianpin
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesive strength Annealing Applied sciences Contact angle Cross-disciplinary physics: materials science rheology Crystal structure Crystallization Electric properties Electrodes Electronics Electronics and Microelectronics Engineering Etching Exact sciences and technology Information storage Instrumentation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials science Mechanical Engineering Mechanical engineering. Machine design Mechanical instruments, equipment and techniques Methods of nanofabrication Microelectronic fabrication (materials and surfaces technology) Micromechanical devices and systems Nanoindenters Nanotechnology Phase transitions Physics Precision engineering, watch making Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Technical Paper Temperature
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Zusammenfassung:	A Si 2 Sb 2 Te 5 (SST) memory array with density of 4 Gbit/in. 2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 μm 2 . Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by Nano Indenter ® . Electrical property of SST electrical probe storage (EPS) system was measured. Resistance of as-deposited SST film was about four orders of magnitude higher than that of the one annealed at 350°C. Resistance of EPS cell dropped about two orders from high-resistance state to low-resistance state.
ISSN:	0946-7076 1432-1858
DOI:	10.1007/s00542-009-0889-z