Design and simulation of RF MEMS shunt capacitive switch with non-uniform meanders for C-band applications

This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using COMSOL(FEM) and HFSS tools. The proposed switch has the design with non-uniform meanders and dielectric material Silicon Nitrate (Si 3 N 4 ). Different beam materials such as Gold, Aluminum, and Platinum are used to design the switch and analyze it. In the electro mechanical analysis of the switch, the pull-in voltage obtained for the beam material Platinum is 10.56 V for a gap (between the beam and signal-line dielectric) of 2.5 µm which is effective in comparison to the other materials like Gold and Aluminum. As far as the RF performance analysis is concerned, the isolation, insertion loss and return loss have been calculated. The isolation, return loss and insertion loss are − 25 dB, − 14.3 dB and − 0.33 dB respectively. On performing the stress analysis of the switch, a stress value of 0.05 N/m 2 has been obtained for the applied pull-in voltage. The proposed switch is used for C band applications.