Damping effect of longitudinal optical phonon—plasmon coupling on thermal radiation from surface micro-gratings on direct and indirect electronic transition type semiconductors

Thermal radiation properties of surface micro-Au-line and space structures on direct and indirect electronic transition-type semiconductors of n-type (n-) GaAs and GaP, respectively, are studied. The electron densities range from 0.62 to 1.0 × 1018 cm−3. The emission spectra of samples on n-GaAs waf...

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Veröffentlicht in:Applied physics letters 2024-01, Vol.124 (3)
Hauptverfasser: Lin, Bojin, Aye, Hnin Lai Lai, Seimiya, Koichi, Shwe, Thee Ei Khaing, Asaji, Tatsuya, Ishitani, Yoshihiro
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Sprache:eng
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Zusammenfassung:Thermal radiation properties of surface micro-Au-line and space structures on direct and indirect electronic transition-type semiconductors of n-type (n-) GaAs and GaP, respectively, are studied. The electron densities range from 0.62 to 1.0 × 1018 cm−3. The emission spectra of samples on n-GaAs wafers show peak energies significantly shifted from the longitudinal optical (LO) phonon energy due to the LO-phonon−plasmon coupling (LOPC) at 630 K, while partial decoupling is observed. The thermal emission from the sample on n-GaP is peaked at 395.9 cm−1, shifted only by 1.5 cm−1 from the LO-phonon energy, with a linewidth of 12.5 cm−1 at 630 K. The effect of LOPC on the emission from the sample on n-GaP is mostly suppressed because of the electron localization in the X-valley, suggesting an advantage of indirect transition-type semiconductors in LO-phonon resonant infrared emitters using the phonons generated via the electron energy relaxation.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0167702