Three-dimensional integration of two-dimensional field-effect transistors
In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially ava...
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| Veröffentlicht in: | Nature (London) 2024-01, Vol.625 (7994), p.276-281 |
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| creator | Jayachandran, Darsith Pendurthi, Rahul Sadaf, Muhtasim Ul Karim Sakib, Najam U Pannone, Andrew Chen, Chen Han, Ying Trainor, Nicholas Kumari, Shalini Mc Knight, Thomas V. Redwing, Joan M. Yang, Yang Das, Saptarshi |
| description | In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’
1
but also introduces multifunctionalities for ‘More than Moore’
2
technologies. Although silicon-based 3D integrated circuits are commercially available
3
–
5
, there is limited effort on 3D integration of emerging nanomaterials
6
,
7
such as two-dimensional (2D) materials despite their unique functionalities
7
–
10
. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS
2
with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS
2
and WSe
2
with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS
2
FETs (channel length,
L
CH
= 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies. |
| doi_str_mv | 10.1038/s41586-023-06860-5 |
| format | Article |
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1
but also introduces multifunctionalities for ‘More than Moore’
2
technologies. Although silicon-based 3D integrated circuits are commercially available
3
–
5
, there is limited effort on 3D integration of emerging nanomaterials
6
,
7
such as two-dimensional (2D) materials despite their unique functionalities
7
–
10
. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS
2
with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS
2
and WSe
2
with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS
2
FETs (channel length,
L
CH
= 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
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1
but also introduces multifunctionalities for ‘More than Moore’
2
technologies. Although silicon-based 3D integrated circuits are commercially available
3
–
5
, there is limited effort on 3D integration of emerging nanomaterials
6
,
7
such as two-dimensional (2D) materials despite their unique functionalities
7
–
10
. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS
2
with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS
2
and WSe
2
with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS
2
FETs (channel length,
L
CH
= 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies.</description><subject>140/133</subject><subject>639/301/1005/1007</subject><subject>639/301/357/1018</subject><subject>Field effect transistors</subject><subject>Humanities and Social Sciences</subject><subject>Integrated circuits</subject><subject>Molybdenum disulfide</subject><subject>multidisciplinary</subject><subject>Organic chemicals</subject><subject>Scanning electron microscopy</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Spectrum analysis</subject><subject>Standard deviation</subject><subject>Transistors</subject><subject>Two dimensional 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(London)</jtitle><stitle>Nature</stitle><addtitle>Nature</addtitle><date>2024-01-11</date><risdate>2024</risdate><volume>625</volume><issue>7994</issue><spage>276</spage><epage>281</epage><pages>276-281</pages><issn>0028-0836</issn><eissn>1476-4687</eissn><abstract>In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’
1
but also introduces multifunctionalities for ‘More than Moore’
2
technologies. Although silicon-based 3D integrated circuits are commercially available
3
–
5
, there is limited effort on 3D integration of emerging nanomaterials
6
,
7
such as two-dimensional (2D) materials despite their unique functionalities
7
–
10
. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS
2
with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS
2
and WSe
2
with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS
2
FETs (channel length,
L
CH
= 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>38200300</pmid><doi>10.1038/s41586-023-06860-5</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6457-2858</orcidid><orcidid>https://orcid.org/0000-0002-0188-945X</orcidid><orcidid>https://orcid.org/0000-0001-7849-1995</orcidid><orcidid>https://orcid.org/0000-0002-0025-5914</orcidid><orcidid>https://orcid.org/0000-0002-6621-2351</orcidid><orcidid>https://orcid.org/0000-0002-7906-452X</orcidid><orcidid>https://orcid.org/0000-0001-9013-3699</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Nature (London), 2024-01, Vol.625 (7994), p.276-281 |
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| subjects | 140/133 639/301/1005/1007 639/301/357/1018 Field effect transistors Humanities and Social Sciences Integrated circuits Molybdenum disulfide multidisciplinary Organic chemicals Scanning electron microscopy Science Science (multidisciplinary) Semiconductor devices Semiconductors Silicon Spectrum analysis Standard deviation Transistors Two dimensional materials |
| title | Three-dimensional integration of two-dimensional field-effect transistors |
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