Three-dimensional integration of two-dimensional field-effect transistors
In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially ava...
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Veröffentlicht in: | Nature (London) 2024-01, Vol.625 (7994), p.276-281 |
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Zusammenfassung: | In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’
1
but also introduces multifunctionalities for ‘More than Moore’
2
technologies. Although silicon-based 3D integrated circuits are commercially available
3
–
5
, there is limited effort on 3D integration of emerging nanomaterials
6
,
7
such as two-dimensional (2D) materials despite their unique functionalities
7
–
10
. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS
2
with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS
2
and WSe
2
with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS
2
FETs (channel length,
L
CH
= 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies. |
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ISSN: | 0028-0836 1476-4687 |
DOI: | 10.1038/s41586-023-06860-5 |