Three-dimensional integration of two-dimensional field-effect transistors

In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially ava...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nature (London) 2024-01, Vol.625 (7994), p.276-281
Hauptverfasser: Jayachandran, Darsith, Pendurthi, Rahul, Sadaf, Muhtasim Ul Karim, Sakib, Najam U, Pannone, Andrew, Chen, Chen, Han, Ying, Trainor, Nicholas, Kumari, Shalini, Mc Knight, Thomas V., Redwing, Joan M., Yang, Yang, Das, Saptarshi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially available 3 – 5 , there is limited effort on 3D integration of emerging nanomaterials 6 , 7 such as two-dimensional (2D) materials despite their unique functionalities 7 – 10 . Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS 2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS 2 and WSe 2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS 2 FETs (channel length, L CH  = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension. Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies.
ISSN:0028-0836
1476-4687
DOI:10.1038/s41586-023-06860-5