Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off

This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load mo...

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Veröffentlicht in:IEICE Transactions on Electronics 2023/12/01, Vol.E106.C(12), pp.808-811
Hauptverfasser: YOU, Minghui, LIU, Guohua, CHENG, Zhiqun
Format: Artikel
Sprache:eng
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Zusammenfassung:This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
ISSN:0916-8524
1745-1353
DOI:10.1587/transele.2023ECS6002