Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off
This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load mo...
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Veröffentlicht in: | IEICE Transactions on Electronics 2023/12/01, Vol.E106.C(12), pp.808-811 |
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Sprache: | eng |
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Zusammenfassung: | This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively. |
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ISSN: | 0916-8524 1745-1353 |
DOI: | 10.1587/transele.2023ECS6002 |