Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics

Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics

A detailed understanding of cycling induced degradation of interfacial SiO2 in HfO2-FeFET devices is presented. By direct observation of electron trapping to cycling-generated trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a non...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-02, Vol.63 (2), p.02SP43
Hauptverfasser: Schlykow, Viktoria, Suzuki, Kunifumi, Yoshimura, Yoko, Hamai, Takamasa, Sakuma, Kiwamu, Matsuo, Kazuhiro, Suzuki, Masamichi, Saitoh, Masumi, Ichihara, Reika
Format: Artikel
Sprache:eng
Schlagworte:
charge-trap
Cycles
Degradation
FeFET
Hafnium oxide
HfO
memory
Recovery
retention
Silicon dioxide
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Zusammenfassung:A detailed understanding of cycling induced degradation of interfacial SiO2 in HfO2-FeFET devices is presented. By direct observation of electron trapping to cycling-generated trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a non-negligible impact on the retention characteristics after cycling.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad1255