A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis
In this article, we propose a position-oriented carbon nanotube (CNT) sampling method based on the Monte Carlo (MC) concept, which obtains the relative positional distribution and concentration of CNTs, providing an accurate modeling basis. The copper-CNT (Cu-CNT) through-silicon via (TSV) model is...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-01, Vol.71 (1), p.1-8 |
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| creator | Xu, Baohui Chen, Rongmei Zhou, Jiuren Liang, Jie |
| description | In this article, we propose a position-oriented carbon nanotube (CNT) sampling method based on the Monte Carlo (MC) concept, which obtains the relative positional distribution and concentration of CNTs, providing an accurate modeling basis. The copper-CNT (Cu-CNT) through-silicon via (TSV) model is established through the transition from the unit level to the circuit level, and the circuit analysis is performed with the TSV pair. We find that Cu-CNT TSVs have better resistivity than Cu TSVs in long-distance transport under the premise of ensuring variability. But CNT does not optimize the crosstalk performance of the composite material, as expected, due to the inhibition of CNTs by Cu in the composite. Cu-CNT well reduces the negative impact of interfacial resistance on delay ( |
| doi_str_mv | 10.1109/TED.2023.3293780 |
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The copper-CNT (Cu-CNT) through-silicon via (TSV) model is established through the transition from the unit level to the circuit level, and the circuit analysis is performed with the TSV pair. We find that Cu-CNT TSVs have better resistivity than Cu TSVs in long-distance transport under the premise of ensuring variability. But CNT does not optimize the crosstalk performance of the composite material, as expected, due to the inhibition of CNTs by Cu in the composite. Cu-CNT well reduces the negative impact of interfacial resistance on delay (<inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula>0.146%) and exhibits excellent heat dissipation and reliability. Under ideal conditions, its median time to failure (MTTF) can be as high as Cu ten times with a small current capacity loss. 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The copper-CNT (Cu-CNT) through-silicon via (TSV) model is established through the transition from the unit level to the circuit level, and the circuit analysis is performed with the TSV pair. We find that Cu-CNT TSVs have better resistivity than Cu TSVs in long-distance transport under the premise of ensuring variability. But CNT does not optimize the crosstalk performance of the composite material, as expected, due to the inhibition of CNTs by Cu in the composite. Cu-CNT well reduces the negative impact of interfacial resistance on delay (<inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula>0.146%) and exhibits excellent heat dissipation and reliability. Under ideal conditions, its median time to failure (MTTF) can be as high as Cu ten times with a small current capacity loss. 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(IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1061-3930</orcidid><orcidid>https://orcid.org/0000-0003-1205-0585</orcidid><orcidid>https://orcid.org/0000-0002-0595-8598</orcidid><orcidid>https://orcid.org/0000-0002-0915-5354</orcidid></search><sort><creationdate>20240101</creationdate><title>A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis</title><author>Xu, Baohui ; Chen, Rongmei ; Zhou, Jiuren ; Liang, Jie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-debebab0cb9be5e065487ff2149050cc655e81e1ac1bd6cc7e9dfdac11f538cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Analytical models</topic><topic>Carbon nanotube (CNT) interconnect</topic><topic>Carbon nanotubes</topic><topic>compact model</topic><topic>Composite materials</topic><topic>Conductivity</topic><topic>Copper</topic><topic>copper-CNT (Cu-CNT) composite</topic><topic>Inductance</topic><topic>Integrated circuit modeling</topic><topic>Integrated circuits</topic><topic>Interconnections</topic><topic>Modelling</topic><topic>Reliability</topic><topic>Reliability analysis</topic><topic>Resistance</topic><topic>through-silicon via (TSV)</topic><topic>Through-silicon vias</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Baohui</creatorcontrib><creatorcontrib>Chen, Rongmei</creatorcontrib><creatorcontrib>Zhou, Jiuren</creatorcontrib><creatorcontrib>Liang, Jie</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xu, Baohui</au><au>Chen, Rongmei</au><au>Zhou, Jiuren</au><au>Liang, Jie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-01-01</date><risdate>2024</risdate><volume>71</volume><issue>1</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this article, we propose a position-oriented carbon nanotube (CNT) sampling method based on the Monte Carlo (MC) concept, which obtains the relative positional distribution and concentration of CNTs, providing an accurate modeling basis. The copper-CNT (Cu-CNT) through-silicon via (TSV) model is established through the transition from the unit level to the circuit level, and the circuit analysis is performed with the TSV pair. We find that Cu-CNT TSVs have better resistivity than Cu TSVs in long-distance transport under the premise of ensuring variability. But CNT does not optimize the crosstalk performance of the composite material, as expected, due to the inhibition of CNTs by Cu in the composite. Cu-CNT well reduces the negative impact of interfacial resistance on delay (<inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula>0.146%) and exhibits excellent heat dissipation and reliability. Under ideal conditions, its median time to failure (MTTF) can be as high as Cu ten times with a small current capacity loss. 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| subjects | Analytical models Carbon nanotube (CNT) interconnect Carbon nanotubes compact model Composite materials Conductivity Copper copper-CNT (Cu-CNT) composite Inductance Integrated circuit modeling Integrated circuits Interconnections Modelling Reliability Reliability analysis Resistance through-silicon via (TSV) Through-silicon vias |
| title | A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis |
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