An X-Band GaN HEMT Oscillator with Four-Path Inductors
An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8...
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| Veröffentlicht in: | Applied Computational Electromagnetics Society journal 2020-09, Vol.35 (9), p.1059-1063 |
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| creator | Lai, Wen-Cheng Jang, Sheng-Lyang |
| description | An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with
four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2. |
| doi_str_mv | 10.47037/2020.ACES.J.350912 |
| format | Article |
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four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.</abstract><cop>Pisa</cop><pub>River Publishers</pub><doi>10.47037/2020.ACES.J.350912</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Design High electron mobility transistors Inductors Oscillators Phase noise Power consumption Radio frequency Superhigh frequencies Voltage controlled oscillators |
| title | An X-Band GaN HEMT Oscillator with Four-Path Inductors |
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