An X-Band GaN HEMT Oscillator with Four-Path Inductors

An X-Band GaN HEMT Oscillator with Four-Path Inductors

An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8...

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Veröffentlicht in:Applied Computational Electromagnetics Society journal 2020-09, Vol.35 (9), p.1059-1063
Hauptverfasser: Lai, Wen-Cheng, Jang, Sheng-Lyang
Format: Artikel
Sprache:eng
Schlagworte:
Design
High electron mobility transistors
Inductors
Oscillators
Phase noise
Power consumption
Radio frequency
Superhigh frequencies
Voltage controlled oscillators
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Zusammenfassung:An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.
ISSN:1054-4887
1054-4887
1943-5711
DOI:10.47037/2020.ACES.J.350912