Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator

The changes caused by total ionizing dose (TID) in the conductance of the analog response of Ag-Ge30Se70 conductive bridge random access memory (CBRAM) based synapses are studied. The conductance was seen to be severely affected by 60Co gamma ray exposure. The devices were tested up to a TID of 1 Mr...

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Veröffentlicht in:	IEEE transactions on nuclear science 2023-12, Vol.70 (12), p.2572-2577
Hauptverfasser:	Apsangi, P., Chamele, N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E., Kozicki, M. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog synapse Artificial neural networks Conductance conductive bridge random access memory (CBRAM) Conductivity measurement Deep learning Depression Gamma rays Ionization Irradiation Neural networks neuromorphic accelerator neuromorphic computing Neuromorphic engineering Performance evaluation Programming Radiation Random access memory Resistance resistive random access memory (RRAM) Scanning electron microscopy Switches Synapses total ionizing dose (TID) Training
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Zusammenfassung:	The changes caused by total ionizing dose (TID) in the conductance of the analog response of Ag-Ge30Se70 conductive bridge random access memory (CBRAM) based synapses are studied. The conductance was seen to be severely affected by 60Co gamma ray exposure. The devices were tested up to a TID of 1 Mrad(Ge30Se70). Scanning electron microscopy imaging supports the conclusion that the device degradation is due to loss of filament contact after irradiation. The effect of irradiation was further analyzed by simulating the devices in an artificial neural network. The training accuracy was seen to degrade from 85% to 15% with increasing TID levels.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2023.3318511