1T MoS2/CoS2 heterostructures enabling enhanced resistive switching behavior in sodium alginate-based flexible memristors

As the demand for wearable electronics escalates, flexible resistive random-access memory has garnered significant attention owing to its excellent flexibility and data storage capability. In this study, 1T MoS2/CoS2 nanorods obtained by a two-step hydrothermal method were embedded into sodium algin...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-12, Vol.11 (48), p.17050-17060
Hauptverfasser:	Jiao, Zipan, Lan, Xiaoyan, Zhou, Xinglan, Wang, Kunjie, Zong, Haoran, Zhang, Peng, Xu, Benhua
Format:	Artikel
Sprache:	eng
Schlagworte:	Cobalt sulfide Data storage Heterostructures Interlayers Molybdenum disulfide Nanocomposites Nanorods Random access memory Sodium alginate Spin coating Sulfur Switching
Online-Zugang:	Volltext
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