1T MoS2/CoS2 heterostructures enabling enhanced resistive switching behavior in sodium alginate-based flexible memristors

As the demand for wearable electronics escalates, flexible resistive random-access memory has garnered significant attention owing to its excellent flexibility and data storage capability. In this study, 1T MoS2/CoS2 nanorods obtained by a two-step hydrothermal method were embedded into sodium alginate (SA) for fabricating 1T MoS2/CoS2-SA nanocomposites, and the 1T MoS2/CoS2-SA films were obtained via spin coating. The obtained films acting as interlayer materials of flexible Al/1T MoS2/CoS2-SA/ITO/PET devices demonstrate bipolar resistive switching (BRS) behavior. The distinct heterostructures and abundant sulfur vacancies present in the 1T MoS2/CoS2 nanorods are crucial factors in facilitating the resistive switching (RS) mechanism. It is notable that the content of sulfur vacancies leads to different RS properties. The Al/1T MoS2/CoS2-SA/ITO/PET device exhibits low set voltage, high ION/IOFF, long endurance and long retention. It may be highlighted that this work proposes a feasible strategy to effectively optimize FRRAM devices for future applications.