Optimizing the single-source flash thermal evaporation process of Zn-doped CsPbBr3 films for enhanced performance in perovskite LEDs

In this study, we employed the flash thermal evaporation method to create thin films of CsPbBr 3 doped with Zn 2+ thin film as an emitting layer, aiming to boost the performance of LED devices. ZnBr 2 was added to CsPbBr 3 powders at different concentrations (0%, 5%, 10%, 15%, and 20%), using it as a sole source material for vacuum thermal evaporation. It was found that with the incorporation of 10% Zn 2+ , the photoluminescence intensity of the film was 2.5 times higher than that of the undoped CsPbBr 3 film. As a result, the LED based on 10%- Zn doped CsPbBr 3 emitter layer shows the highest luminance and current efficiency of up to 5000 cd m −2 and 5.89 cd × A −1 , respectively at 4.8 V, which is much higher than that of the device based on CsPbBr 3 (1321 cd m −2 and 0.09 cd × A −1 ). The findings of this research are anticipated to benefit future perovskite LED studies using single-source thermal evaporation.