Optical Detection of Dynamic Polarization of Nuclei in Semiconductors
Much research has been performed by now on optical pumping of spin-polarized electrons in semiconductors [1–6]. In these experiments, the spin-oriented carriers were excited from the valence band into the conduction band by absorption of circularly-polarized light. The most convenient for the detect...
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Veröffentlicht in: | JETP letters 2023-12, Vol.118 (Suppl 1), p.S23-S25 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Much research has been performed by now on optical pumping of spin-polarized electrons in semiconductors [1–6]. In these experiments, the spin-oriented carriers were excited from the valence band into the conduction band by absorption of circularly-polarized light. The most convenient for the detection of the spin orientation of the electrons is an optical method [2, 3] with investigation of the recombination-luminescence polarization. For III–V crystals, the selection rules for interband transitions yield a simple connection
S
= 0.5
P
between the degree of circular polarization of the luminescence (
S
) and the degree of stationary orientation of the electrons (
P
) at the bottom of the conduction band. We have investigated, also by an optical method, a number of effects that arise when the electron spins interact strongly with the magnetic moments of the nuclei in the crystal. |
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ISSN: | 0021-3640 1090-6487 |
DOI: | 10.1134/S0021364023130088 |