Optical Detection of Dynamic Polarization of Nuclei in Semiconductors

Much research has been performed by now on optical pumping of spin-polarized electrons in semiconductors [1–6]. In these experiments, the spin-oriented carriers were excited from the valence band into the conduction band by absorption of circularly-polarized light. The most convenient for the detect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:JETP letters 2023-12, Vol.118 (Suppl 1), p.S23-S25
Hauptverfasser: Ekimov, A.I., Safarov, V.I.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Much research has been performed by now on optical pumping of spin-polarized electrons in semiconductors [1–6]. In these experiments, the spin-oriented carriers were excited from the valence band into the conduction band by absorption of circularly-polarized light. The most convenient for the detection of the spin orientation of the electrons is an optical method [2, 3] with investigation of the recombination-luminescence polarization. For III–V crystals, the selection rules for interband transitions yield a simple connection S  = 0.5 P between the degree of circular polarization of the luminescence ( S ) and the degree of stationary orientation of the electrons ( P ) at the bottom of the conduction band. We have investigated, also by an optical method, a number of effects that arise when the electron spins interact strongly with the magnetic moments of the nuclei in the crystal.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364023130088