A High Power Electro-Absorption Modulated Laser Integrated With SOA Suitable for 50G PON Application

An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB pen...

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Veröffentlicht in:	IEEE photonics technology letters 2024-01, Vol.36 (1), p.5-7
Hauptverfasser:	Chen, Xin, Wang, Haibo, Cronin, Richard, Griffiths, James, Talli, Giuseppe, Rosales, Ricardo, Atra, Kebede Tesema, Lin, Youxi, Huang, Rongfang, Pate, Malcolm, Repiso, Eva, Silva, Matteo, Rogers, David, Wang, Chaoyi, Burlinson, Stephen, Berry, Graham, Aivaliotis, Pantelis, Liu, Xuefeng, Zhou, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	50G PON Bandwidth Chirp distributed reflection laser electro-absorption modulator Passive optical networks Power amplifiers Power generation Semiconductor device measurement Semiconductor laser semiconductor optical amplifier Semiconductor optical amplifiers
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Beschreibung
Zusammenfassung:	An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB penalty observed after 20km transmission.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2023.3330261