Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges
Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide f...
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| Veröffentlicht in: | Theoretical foundations of chemical engineering 2023-08, Vol.57 (4), p.628-632 |
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| container_title | Theoretical foundations of chemical engineering |
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| creator | Semenova, O. V. Patrusheva, T. N. Yuzova, V. A. Lemberg, K. V. Railko, M. Yu Podorozhnyak, S. A. Khol’kin, A. I. |
| description | Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide ferroelectrics (barium and strontium titanates) embedded in pores has been considered. Research has been carried out on the creation of ferroelectric structures based on a porous silicon matrix with barium and strontium titanates introduced in it using electrochemical anode treatment and pyrolytic extraction. The dielectric losses of capacitor structures based on a porous silicon matrix with an embedded ferroelectric were studied experimentally, and it was shown that that the obtained capacitor structures can be used in the HF and microwave ranges. |
| doi_str_mv | 10.1134/S0040579523040255 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2891158962</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2891158962</sourcerecordid><originalsourceid>FETCH-LOGICAL-c268t-8451dd17cda0ef29698eb5b7ddb016e61029b3256cef5a5f3f03c64513c053453</originalsourceid><addsrcrecordid>eNp1kc1OAyEUhYnRxFp9AHckrkf5GejMUmtrTWo0tq4nlLlYmnaowGh8FZ9WxhpdGFfAuec795KL0Ckl55Ty_GJGSE7EoBSMpwsTYg_1qCRFxnNO91GvK2dd_RAdhbAihJRSlj30MTIGdMTO4LkHFTfQRDx0TW2jdU3o9KHaKm2j83gWfatj6yHgKxWgxq7BD867NuCZXVudnqqp8Ri8d7BOsd7qzjNfgvX42v5oUxdCCrENjkvAk_EXdme1d2_qFfCjap4hHKMDo9YBTr7PPnoaj-bDSTa9v7kdXk4zzWQRsyIXtK7pQNeKgGGlLAtYiMWgrheESpCUsHLBmZAajFDCcEO4lgnimgieC95HZ7vcrXcvLYRYrVzrm9SyYkVJqShKyZKL7lxpyBA8mGrr7Ub594qSqltB9WcFiWE7JiRv-pL_Tf4f-gQZE4lA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2891158962</pqid></control><display><type>article</type><title>Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges</title><source>SpringerNature Journals</source><creator>Semenova, O. V. ; Patrusheva, T. N. ; Yuzova, V. A. ; Lemberg, K. V. ; Railko, M. Yu ; Podorozhnyak, S. A. ; Khol’kin, A. I.</creator><creatorcontrib>Semenova, O. V. ; Patrusheva, T. N. ; Yuzova, V. A. ; Lemberg, K. V. ; Railko, M. Yu ; Podorozhnyak, S. A. ; Khol’kin, A. I.</creatorcontrib><description>Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide ferroelectrics (barium and strontium titanates) embedded in pores has been considered. Research has been carried out on the creation of ferroelectric structures based on a porous silicon matrix with barium and strontium titanates introduced in it using electrochemical anode treatment and pyrolytic extraction. The dielectric losses of capacitor structures based on a porous silicon matrix with an embedded ferroelectric were studied experimentally, and it was shown that that the obtained capacitor structures can be used in the HF and microwave ranges.</description><identifier>ISSN: 0040-5795</identifier><identifier>EISSN: 1608-3431</identifier><identifier>DOI: 10.1134/S0040579523040255</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Barium ; Capacitors ; Chemistry ; Chemistry and Materials Science ; Dielectric loss ; Dielectrics ; Ferroelectric materials ; Ferroelectricity ; Industrial Chemistry/Chemical Engineering ; Porous media ; Porous silicon ; Strontium ; Strontium oxides ; Strontium titanates ; Technology of Inorganic Substances and Materials</subject><ispartof>Theoretical foundations of chemical engineering, 2023-08, Vol.57 (4), p.628-632</ispartof><rights>Pleiades Publishing, Ltd. 2023. ISSN 0040-5795, Theoretical Foundations of Chemical Engineering, 2023, Vol. 57, No. 4, pp. 628–632. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Khimicheskaya Tekhnologiya, 2022, Vol. 23, No. 4, pp. 168–173.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-8451dd17cda0ef29698eb5b7ddb016e61029b3256cef5a5f3f03c64513c053453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0040579523040255$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0040579523040255$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27926,27927,41490,42559,51321</link.rule.ids></links><search><creatorcontrib>Semenova, O. V.</creatorcontrib><creatorcontrib>Patrusheva, T. N.</creatorcontrib><creatorcontrib>Yuzova, V. A.</creatorcontrib><creatorcontrib>Lemberg, K. V.</creatorcontrib><creatorcontrib>Railko, M. Yu</creatorcontrib><creatorcontrib>Podorozhnyak, S. A.</creatorcontrib><creatorcontrib>Khol’kin, A. I.</creatorcontrib><title>Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges</title><title>Theoretical foundations of chemical engineering</title><addtitle>Theor Found Chem Eng</addtitle><description>Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide ferroelectrics (barium and strontium titanates) embedded in pores has been considered. Research has been carried out on the creation of ferroelectric structures based on a porous silicon matrix with barium and strontium titanates introduced in it using electrochemical anode treatment and pyrolytic extraction. The dielectric losses of capacitor structures based on a porous silicon matrix with an embedded ferroelectric were studied experimentally, and it was shown that that the obtained capacitor structures can be used in the HF and microwave ranges.</description><subject>Barium</subject><subject>Capacitors</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Dielectric loss</subject><subject>Dielectrics</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Porous media</subject><subject>Porous silicon</subject><subject>Strontium</subject><subject>Strontium oxides</subject><subject>Strontium titanates</subject><subject>Technology of Inorganic Substances and Materials</subject><issn>0040-5795</issn><issn>1608-3431</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kc1OAyEUhYnRxFp9AHckrkf5GejMUmtrTWo0tq4nlLlYmnaowGh8FZ9WxhpdGFfAuec795KL0Ckl55Ty_GJGSE7EoBSMpwsTYg_1qCRFxnNO91GvK2dd_RAdhbAihJRSlj30MTIGdMTO4LkHFTfQRDx0TW2jdU3o9KHaKm2j83gWfatj6yHgKxWgxq7BD867NuCZXVudnqqp8Ri8d7BOsd7qzjNfgvX42v5oUxdCCrENjkvAk_EXdme1d2_qFfCjap4hHKMDo9YBTr7PPnoaj-bDSTa9v7kdXk4zzWQRsyIXtK7pQNeKgGGlLAtYiMWgrheESpCUsHLBmZAajFDCcEO4lgnimgieC95HZ7vcrXcvLYRYrVzrm9SyYkVJqShKyZKL7lxpyBA8mGrr7Ub594qSqltB9WcFiWE7JiRv-pL_Tf4f-gQZE4lA</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Semenova, O. V.</creator><creator>Patrusheva, T. N.</creator><creator>Yuzova, V. A.</creator><creator>Lemberg, K. V.</creator><creator>Railko, M. Yu</creator><creator>Podorozhnyak, S. A.</creator><creator>Khol’kin, A. I.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230801</creationdate><title>Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges</title><author>Semenova, O. V. ; Patrusheva, T. N. ; Yuzova, V. A. ; Lemberg, K. V. ; Railko, M. Yu ; Podorozhnyak, S. A. ; Khol’kin, A. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-8451dd17cda0ef29698eb5b7ddb016e61029b3256cef5a5f3f03c64513c053453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Barium</topic><topic>Capacitors</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Dielectric loss</topic><topic>Dielectrics</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Porous media</topic><topic>Porous silicon</topic><topic>Strontium</topic><topic>Strontium oxides</topic><topic>Strontium titanates</topic><topic>Technology of Inorganic Substances and Materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Semenova, O. V.</creatorcontrib><creatorcontrib>Patrusheva, T. N.</creatorcontrib><creatorcontrib>Yuzova, V. A.</creatorcontrib><creatorcontrib>Lemberg, K. V.</creatorcontrib><creatorcontrib>Railko, M. Yu</creatorcontrib><creatorcontrib>Podorozhnyak, S. A.</creatorcontrib><creatorcontrib>Khol’kin, A. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Theoretical foundations of chemical engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Semenova, O. V.</au><au>Patrusheva, T. N.</au><au>Yuzova, V. A.</au><au>Lemberg, K. V.</au><au>Railko, M. Yu</au><au>Podorozhnyak, S. A.</au><au>Khol’kin, A. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges</atitle><jtitle>Theoretical foundations of chemical engineering</jtitle><stitle>Theor Found Chem Eng</stitle><date>2023-08-01</date><risdate>2023</risdate><volume>57</volume><issue>4</issue><spage>628</spage><epage>632</epage><pages>628-632</pages><issn>0040-5795</issn><eissn>1608-3431</eissn><abstract>Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide ferroelectrics (barium and strontium titanates) embedded in pores has been considered. Research has been carried out on the creation of ferroelectric structures based on a porous silicon matrix with barium and strontium titanates introduced in it using electrochemical anode treatment and pyrolytic extraction. The dielectric losses of capacitor structures based on a porous silicon matrix with an embedded ferroelectric were studied experimentally, and it was shown that that the obtained capacitor structures can be used in the HF and microwave ranges.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0040579523040255</doi><tpages>5</tpages></addata></record> |
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| subjects | Barium Capacitors Chemistry Chemistry and Materials Science Dielectric loss Dielectrics Ferroelectric materials Ferroelectricity Industrial Chemistry/Chemical Engineering Porous media Porous silicon Strontium Strontium oxides Strontium titanates Technology of Inorganic Substances and Materials |
| title | Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T10%3A39%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Treatment%20Conditions%20of%20Capacitor%20Structures%20Based%20on%20Porous%20Silicon%20and%20Ferroelectric%20on%20Their%20Dielectric%20Losses%20in%20the%20HF%20and%20Microwave%20Ranges&rft.jtitle=Theoretical%20foundations%20of%20chemical%20engineering&rft.au=Semenova,%20O.%20V.&rft.date=2023-08-01&rft.volume=57&rft.issue=4&rft.spage=628&rft.epage=632&rft.pages=628-632&rft.issn=0040-5795&rft.eissn=1608-3431&rft_id=info:doi/10.1134/S0040579523040255&rft_dat=%3Cproquest_cross%3E2891158962%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2891158962&rft_id=info:pmid/&rfr_iscdi=true |