Effect of Treatment Conditions of Capacitor Structures Based on Porous Silicon and Ferroelectric on Their Dielectric Losses in the HF and Microwave Ranges

Capacitors based on silicon materials and technologies have become widely used in high-frequency applications in the current decade. To reduce the dielectric losses of silicon capacitors in the HF and microwave ranges, the possibility of creating capacitor structures from porous silicon with oxide ferroelectrics (barium and strontium titanates) embedded in pores has been considered. Research has been carried out on the creation of ferroelectric structures based on a porous silicon matrix with barium and strontium titanates introduced in it using electrochemical anode treatment and pyrolytic extraction. The dielectric losses of capacitor structures based on a porous silicon matrix with an embedded ferroelectric were studied experimentally, and it was shown that that the obtained capacitor structures can be used in the HF and microwave ranges.