New SOS Diode Pumping Circuit Based on an All-Solid-State Spiral Generator for High-Voltage Nanosecond Applications
Semiconductor opening switch (SOS) diodes are capable to switch currents with a density of more than 1 kA/cm 2 and withstand nanosecond pulses with an amplitude of up to 1 MV. SOS diodes, however, require a specific pumping circuit that must simultaneously provide forward and reverse pumping current...
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Veröffentlicht in: | IEEE transactions on plasma science 2023-10, Vol.51 (10), p.1-8 |
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Sprache: | eng |
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Zusammenfassung: | Semiconductor opening switch (SOS) diodes are capable to switch currents with a density of more than 1 kA/cm 2 and withstand nanosecond pulses with an amplitude of up to 1 MV. SOS diodes, however, require a specific pumping circuit that must simultaneously provide forward and reverse pumping currents with a time of \sim 500 and \sim 100 ns, respectively. Such a pumping circuit with energies > 1 J typically requires a gas-discharge switch or a low-efficient solid-state solution. This study proposes a novel approach to pumping SOS diodes based on a spiral generator (SG) (also known as a vector inversion generator). Due to its wave characteristics, the SG produces a bipolar current discharge that meets the time duration and current amplitude required to pump an SOS diode. Moreover, the initial pulse from the spiral typically has a relatively low current amplitude compared to the opposite polarity secondary pulse, so the SOS diode can operate at very high efficiencies. This idea has been tested using an all-solid-state SG coupled with large-area SOS diodes (1 cm 2 ). With this combination, a voltage pulse of 62 kV having a rise time of only 11 ns was obtained on an open circuit load (3 pF, 1 M \Omega ). The experiments were highly repeatable, with no damage to the components despite multiple tests. There is significant scope to further improve the results, with simple alterations to the SG. |
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ISSN: | 0093-3813 1939-9375 |
DOI: | 10.1109/TPS.2023.3273813 |