One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

Using a quaternary compound target, Cu(In,Ga)Se2 films are prepared using one‐step, selenization‐free direct current magneton sputtering (DcMS) and high power impulse magnetron sputtering (HiPIMS) methods. This study investigates how the sputtering power affects the composition, microstructure, morphology, and electrical characteristics of the films. Film crystallinity is found to be affected by the sputtering power utilized. The films deposited at 0.25 kW are amorphous, whereas those formed at 0.5–1 kW display a chalcopyrite structure with a (112)–preferred orientation. With increased sputtering power, the films’ crystal quality improves, displaying a homogeneous and compact morphology free of peeling and cracking. Elemental measurement of the CIGS films reveals that, depending on the deposition method, the film composition deviates from that of the target. The electrical properties of the deposited films vary with increasing sputtering power. A single quaternary target is used to fabricate CIGS thin films utilizing two different magnetron sputtering processes that produce various levels of highly ionized plasmas. The growth, morphology, chemical composition, and electrical properties of the films, as well as how the sputtering process, which comprises the sputtering yield and sputtering transfer processes, affect them, are all thoroughly discussed.