Investigation of GaN-Aln-Tio2 nanoflower photoanode for dye-sensitized solar cell application
This work presents a preliminary study of the GaN-AlN-TiO2 nanoflower architecture potential for the dye-sensitized solar cell (DSSC) application. The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sp...
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| creator | Ishak, Nurul Najihah Ali, Mohamed Sultan Mohamed Nayan, Nafarizal Hasnan, Megat Muhammad Ikhsan Megat Othman, Nur Afiqah Ahmad, Mohd Khairul Hamed, Noor Kamalia Abd Fazli, Fatin Izyani Mohd |
| description | This work presents a preliminary study of the GaN-AlN-TiO2 nanoflower architecture potential for the dye-sensitized solar cell (DSSC) application. The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development. |
| doi_str_mv | 10.1063/5.0124193 |
| format | Conference Proceeding |
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The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0124193</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum nitride ; Dye-sensitized solar cells ; Dyes ; Electrical impedance ; Gallium nitrides ; Photoanodes ; Titanium dioxide</subject><ispartof>AIP Conference Proceedings, 2023, Vol.2564 (1)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development.</description><subject>Aluminum nitride</subject><subject>Dye-sensitized solar cells</subject><subject>Dyes</subject><subject>Electrical impedance</subject><subject>Gallium nitrides</subject><subject>Photoanodes</subject><subject>Titanium dioxide</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2023</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkEtLAzEUhYMoWKsL_0HAnZCa12SSZSlaC0U3XbiRkOahKXEyTqZK--sd264ul_txzrkHgFuCJwQL9lBNMKGcKHYGRqSqCKoFEedghLHiiHL2dgmuStlgTFVdyxF4XzQ_vvTxw_QxNzAHODcvaJoatIqZwsY0OaT86zvYfuY-D6vzMOQOup1HxTcl9nHvHSw5mQ5anxI0bZuiPehdg4tgUvE3pzkGq6fH1ewZLV_ni9l0iVrBGJJ4zQXDDhMvvbRUMin5OhBXV4STem0t9QEPlOJMSeItFSYMB-uocFw5NgZ3R9m2y9_b4R29yduuGRw1lZLiWiqmBur-SBUb-0M83Xbxy3Q7TbD-b09X-tQe-wNt12Ff</recordid><startdate>20231026</startdate><enddate>20231026</enddate><creator>Ishak, Nurul Najihah</creator><creator>Ali, Mohamed Sultan Mohamed</creator><creator>Nayan, Nafarizal</creator><creator>Hasnan, Megat Muhammad Ikhsan Megat</creator><creator>Othman, Nur Afiqah</creator><creator>Ahmad, Mohd Khairul</creator><creator>Hamed, Noor Kamalia Abd</creator><creator>Fazli, Fatin Izyani Mohd</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20231026</creationdate><title>Investigation of GaN-Aln-Tio2 nanoflower photoanode for dye-sensitized solar cell application</title><author>Ishak, Nurul Najihah ; Ali, Mohamed Sultan Mohamed ; Nayan, Nafarizal ; Hasnan, Megat Muhammad Ikhsan Megat ; Othman, Nur Afiqah ; Ahmad, Mohd Khairul ; Hamed, Noor Kamalia Abd ; Fazli, Fatin Izyani Mohd</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p633-80b4630d01e8e8c283884bf1d751417bcc2ef080b943981ec26af417cd26d49d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum nitride</topic><topic>Dye-sensitized solar cells</topic><topic>Dyes</topic><topic>Electrical impedance</topic><topic>Gallium nitrides</topic><topic>Photoanodes</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishak, Nurul Najihah</creatorcontrib><creatorcontrib>Ali, Mohamed Sultan Mohamed</creatorcontrib><creatorcontrib>Nayan, Nafarizal</creatorcontrib><creatorcontrib>Hasnan, Megat Muhammad Ikhsan Megat</creatorcontrib><creatorcontrib>Othman, Nur Afiqah</creatorcontrib><creatorcontrib>Ahmad, Mohd Khairul</creatorcontrib><creatorcontrib>Hamed, Noor Kamalia Abd</creatorcontrib><creatorcontrib>Fazli, Fatin Izyani Mohd</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ishak, Nurul Najihah</au><au>Ali, Mohamed Sultan Mohamed</au><au>Nayan, Nafarizal</au><au>Hasnan, Megat Muhammad Ikhsan Megat</au><au>Othman, Nur Afiqah</au><au>Ahmad, Mohd Khairul</au><au>Hamed, Noor Kamalia Abd</au><au>Fazli, Fatin Izyani Mohd</au><au>Sudin, Nor’aisah</au><au>Jamil, Muhammad Mahadi Abd</au><au>Wahab, Mohd Helmy Abd</au><au>Ambar, Radzi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation of GaN-Aln-Tio2 nanoflower photoanode for dye-sensitized solar cell application</atitle><btitle>AIP Conference Proceedings</btitle><date>2023-10-26</date><risdate>2023</risdate><volume>2564</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>This work presents a preliminary study of the GaN-AlN-TiO2 nanoflower architecture potential for the dye-sensitized solar cell (DSSC) application. The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0124193</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP Conference Proceedings, 2023, Vol.2564 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
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| source | AIP Journals (American Institute of Physics) |
| subjects | Aluminum nitride Dye-sensitized solar cells Dyes Electrical impedance Gallium nitrides Photoanodes Titanium dioxide |
| title | Investigation of GaN-Aln-Tio2 nanoflower photoanode for dye-sensitized solar cell application |
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