Investigation of GaN-Aln-Tio2 nanoflower photoanode for dye-sensitized solar cell application

This work presents a preliminary study of the GaN-AlN-TiO2 nanoflower architecture potential for the dye-sensitized solar cell (DSSC) application. The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development.