2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

Beyond the predictions routinely achievable by first-principles calculations and using metal-organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled geometry obtained in confinement at the graphene/SiC interface. Conductive atomic force microscopy (C-AFM) was used to invest...

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Veröffentlicht in:	CrystEngComm 2023-10, Vol.25 (41), p.581-5817
Hauptverfasser:	Sfuncia, Gianfranco, Nicotra, Giuseppe, Giannazzo, Filippo, Pécz, Béla, Gueorguiev, Gueorgui Kostov, Kakanakova-Georgieva, Anelia
Format:	Artikel
Sprache:	eng
Schlagworte:	Confinement Current injection First principles Gallium nitrides Gallium oxides Graphene Mathematical analysis Metalorganic chemical vapor deposition Microscopy Monolayers Organic chemistry Scanning transmission electron microscopy Silicon carbide Stacking sequence (composite materials)
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