Efficient non-collinear antiferromagnetic state switching induced by orbital Hall effect in chromium

Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal based heterostructures. On the other hand, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures is much less efficient than the Pt-based equivalents, as manifested in the almost one order of magnitude smaller terahertz emission intensity and spin current induced magnetoresistance in Cr-based structures. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ~11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as an efficient orbital/spin current source for antiferromagnetic spintronics.