Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR

Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR

This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p + /n + superlattice tunneling junctions conn...

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Veröffentlicht in:Journal of electronic materials 2023-11, Vol.52 (11), p.7068-7073
Hauptverfasser: Gawron, Waldemar, Kubiszyn, Łukasz, Michalczewski, Krystian, Jureńczyk, Jarosław, Piotrowski, Józef, Martyniuk, Piotr
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Heterostructures
Infrared detectors
Instrumentation
Lenses
Materials Science
Molecular beam epitaxy
Operating temperature
Optical and Electronic Materials
Radiation
Sensors
Solid State Physics
Submerging
Superlattices
Topical Collection: 2022 U.S. Workshop on Physics and Chemistry of II-VI Materials
U.S. Workshop on the Physics and Chemistry of II-VI Materials 2022
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Zusammenfassung:This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p + /n + superlattice tunneling junctions connecting adjacent stages. Detectivity of the multi-junction heterostructure detector exceeding 10 10  cm Hz 1/2 /W was estimated at wavelength λ  ~ 9 µm and T  = 210 K and ~ 3 × 10 8  cm Hz 1/2 /W for T  = 300 K, achieving a tenfold improvement in detectivity in comparison to a device without an immersion lens and 30-fold improvement in detectivity in comparison to the single-stage device.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10665-7