Crystal Structure, Sintering Behavior, and Microwave Dielectric Properties of Low-Permittivity Ba2Zr2Si3O12 Ceramics

This study presents the dielectric properties of Ba 2 Zr 2 Si 3 O 12 ceramics, synthesized using the solid state method. The cubic crystal structure of Ba 2 Zr 2 Si 3 O 12 ceramics was conclusively verified through the analysis of XRD patterns and subsequent structural refinement. Refined lattice parameters of a = b = c = 10.23178 Å were found, with a corresponding unit cell volume of V = 1071.159026 Å 3 . The grain microstructure of the ceramics was characterized using SEM, which showed density of 97.6% for the Ba 2 Zr 2 Si 3 O 12 ceramic. The Si-O bond valences ( V Si-O ) were found to be closely related to the τ f of the Ba 2 Zr 2 Si 3 O 12 ceramics. The microwave dielectric properties of the Ba 2 Zr 2 Si 3 O 12 ceramics sintered at 1490°C were ascertained to be ε r = 15.08, Q × f = 14885 GHz ( f = 9.9 GHz), and τ f = −78.6 ppm/°C.